Optical Characteristic and Application of CH₃NH₃PbI₃ Thin Film in Schottky Diode

Abstract:

CH₃NH₃PbI₃ thin film was deposited by a dual-source evaporation system under high vacuum (∼10⁻⁴ Pa). The crystallographic phase was analyzed by X-ray diffraction and confirmed as the perovskite structure. The optical properties of the thin film have been investigated in the spectral range 300-1800 nm. The analysis of the absorption coefficient () reveals direct allowed transition with corresponding energy 1.58 eV. The surface morphology of the film was characterized by atomic force microscopy (AFM). The observed features exhibited by CH₃NH₃PbI₃ give a vital chance to explore its application for various optoelectronic devices. To see its other potential utility, Al/CH₃NH₃PbI₃ /ITO Schottky diodes were fabricated. Based on the analyzing the I-V measurement for the Al/CH₃NH₃PbI₃/ ITO device, the basic device parameters such as barrier height and ideality factor were determined. At the low-voltage region, the current conduction in the device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

• Periodical: Materials Science Forum (Volume 848)
• Pages: 440-445
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.848.440
• Online since: March 2016
• Authors: Liang Chen, Jin Xiang Deng, Hong Li Gao, Qian Qian Yang, Le Kong, Min Cui, Zi Jia Zhang
• Keywords: Annealing, CH₃NH₃PbI₃, Perovskite, Schottky Diode

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