Replacement of High-Purity Copper Target by High-Purity Copper Alloy Target in Very Large Scale Integrated Circuit

Abstract:

With the development of semiconductor technology, the size of complementary metal oxide semiconductor (CMOS) devices has been scaled down to nanoscale dimensions. The technology of copper interconnection is the mainstream technology, so the request of the copper target is more and more rigor. This article analyzes the impact factors on the copper alloy target capability, including oxidation and strength. The aim of this investigation is to set up a bridge between the vendors of copper targets and the foundries of integrated circuit (IC) chip, and the base for the next generation copper targets.

• Periodical: Materials Science Forum (Volume 848)
• Pages: 430-434
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.848.430
• Online since: March 2016
• Authors: Yan Gao, Xiu Liu, Jin Jiang He, Hao Zeng, Xiao Dong Xiong, Yue Wang
• Keywords: Copper Alloy, Electro-Migration, High-Purity, Nanometer, Oxidation, Target

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