Self-Precipitated Process of Te Nanowire from Zr-Doped Sb₂Te₃ Film

Abstract:

By using Zr_6.5(Sb₂Te₃)_93.5 film, Te nanowires with a diameter of 5 to 30 nm were fabricated through annealing process. The results of the bright field TEM images, selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM) demonstrated that the nanowire fitted well with Te hexagonal Te (P3₁21) structure. The EDS mapping implies that Zr element bonded with Te element and induced the formation of single crystalline Te nanowire during the annealing process.

• Periodical: Materials Science Forum (Volume 848)
• Pages: 489-493
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.848.489
• Online since: March 2016
• Authors: Yong Hui Zheng, Yan Cheng, Zhi Tang Song, Wei Jun Yin, Min Zhu, Wei Li Liu, San Nian Song, Song Lin Feng
• Keywords: Annealing Process, Sb₂Te₃, Te Nanowire, Zr

References

[1] L.M. Goncalves, P. Alpuim, A.G. Rolo, J.H. Correia, Thermal co-evaporation of Sb2Te3 thin-films optimized for thermoelectric applications, Thin Solid Films. 519 (2011) 4152-4157.

DOI: 10.1016/j.tsf.2011.01.395

[2] N. Romeo, A. Bosio, R. Tedeschi, A. Romeo, V. Canevari, A highly efficient and stable CdTe/CdS thin film solar cell, Solar Energy Materials & Solar Cells. 58 (1999) 209-218.

DOI: 10.1016/s0927-0248(98)00204-9

[3] S.B. Hu, Z. Zhu, W. Li, L.H. Feng, J.Q. Zhang, L.L. Wu, Band diagram construction of CdTe/Sb2Te3 interface using synchrotron radiation, Solar Energy Materials & Solar Cells. 134 (2015) 329-333.

DOI: 10.1016/j.solmat.2014.10.050

[4] A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, T. Uruga, Understanding the phase-change mechanism of rewritable optical media, Nature Materials. 3 (2004) 703-708.

DOI: 10.1038/nmat1215

[5] H.J. Zhang, C.X. Liu, X.L. Qi, X. Dai, Z. Fang, S.C. Zhang, Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface, Nature Physics 5 (2009) 438-442.

DOI: 10.1038/nphys1270

[6] K.B. Tang, Y.T. Qian, J.H. Zeng, X.G. Yang, Solvothermal route to semiconductor nanowires, Advanced Materials. 15 (2003) 448-450.

DOI: 10.1002/adma.200390104

[7] S. Kan, T. Mokari, E. Rothenberg, U. Banin, Synthesis and size-dependent properties of zinc-blende semiconductor quantum rods, Nature Materials. 2 (2003) 155-158.

DOI: 10.1038/nmat830

[8] X.L. Li, X.R. Wang, L. Zhang, S.W. Lee, H.J. Dai, Chemically derived, Ultra-smooth graphene nanoribbon semiconductors, Science. 319 (2009) 1229-1232.

DOI: 10.1126/science.1150878

[9] J.G. Yu, J.C. Yu, W.K. Ho, L. Mu, X.C. Cheng, Simple and general method for the synthesis of multicomponent Na2V6O16·3H2O single-crystal nanobelts, Journal of the American Chemical Society. 126 (2004) 3422-3423.

DOI: 10.1021/ja031795n

[10] Y.N. Xia, P.D. Y, Y.G. Sun, Y.Y. Wu, B. Mayers, B. Gates, One-dimensional nanostructures: synthesis, characterization, and applications. Advanced Materials 15 (2003) 353-389.

DOI: 10.1002/adma.200390087

[11] H.Y. Chen, H.L. Lu, Y.G. Nie, J.H. Zhang, M.Z. Zhang, Q.Q. Dai, The fabrication of Te nanowires with different orientations by vacuum vapor deposition, Physics Letters A. 362 (2007) 61–65.

DOI: 10.1016/j.physleta.2006.09.088

[12] G.S. Cao, C.W. Dong, L. Wang, Z.S. Liu, Selected-control synthesis of Te nanowires and Te/C nanocables by adjusting hydrothermal temperature, Materials Letters. 63 (2009) 1778-1780.

DOI: 10.1016/j.matlet.2009.05.035

[13] A.W. Zhao, C.H. Ye, G.W. Meng, L.D. Zhang, P.M. Ajayan, Tellurium nanowire arrays synthesized by electrochemical and electrophoretic deposition, Journal of Materials Research. 18 (2003) 2318-2322.

DOI: 10.1557/jmr.2003.0325