The Effect of Sintering Temperature on the Crystal Structure and Luminescence Properties of Pr:LSO Polycrystalline Films

Abstract:

Lutetium oxyorthosilicate (Lu₂SiO₅, LSO) doped with Pr³⁺ was synthesized on cleaned silicon (111) substrates by sol-gel route with the spin-coating technique. XRD patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO occurred at 1100 °C. SEM observations revealed that the surface of the films was smooth, homogeneous and crack-free. When the sintering temperature was 1000 °C, the average grain size of the crystal particles was 100-200 nm and the thickness of the thin film was about 380 nm when the coating layer number up to 10. While the sintering temperature was 1100 °C, the average grain size of the crystal particles was 200-300 nm and the thickness of the thin film was about 320 nm also 10 layers. PL spectra showed when under 1000 °C, the quenching concentration of Pr³⁺ was 0.3 mol%, the characteristic emission peaks was 289 nm and 340 nm and the dominant decay time was 4.64 ns; while under 1100 °C, the quenching concentration of Pr³⁺ was 0.4 mol%, the characteristic emission peaks was 280 nm and 320 nm and the dominant decay time was 2.61 ns.

• Periodical: Materials Science Forum (Volume 852)
• Pages: 1080-1086
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.852.1080
• Online since: April 2016
• Authors: Xiao Xin Zhang, Jian Jun Xie, Ying Shi, Ling Cong Fan, De Bao Lin, Xu Chen, Yu Yu Zhang
• Keywords: Luminescence, Pr:LSO Film, Sol-Gel Method, Spin-Coating Method

References

[1] Y. Ding, G. Zhao, X. Xu, Crystal growth and spectroscopic properties of erbium doped Lu2SiO5, J. Cryst. Growth 312 (2010) 2103-2106.

DOI: 10.1016/j.jcrysgro.2010.03.029

[2] E. van der Kolk, P. Dorenbos, C. van Eijk, et al., 5d electron delocalization of Ce3+ and Pr3+ in Y2SiO5 and Lu2SiO5, Phys. Rev. B 71 (2005).

[3] M. Nikl, H. Ogino, A. Yoshikawa, et al., Fast 5d→4f luminescence of Pr3+ in Lu2SiO5 single crystal host, Chem. Phys. Lett. 410 (2005) 218-221.

DOI: 10.1016/j.cplett.2005.04.115

[4] S. -q. Shen, Q. Ma, Z. -b. Xu, et al., Fabrication, structure and luminescence properties of polycrystalline Tb3+-doped Lu2SiO5 films by Pechini sol–gel method, Appl. Surf. Sci. 258 (2011) 1768-1771.

DOI: 10.1016/j.apsusc.2011.10.041

[5] W. E. Mahmoud, A. A. Al-Ghamdi, F. A. Al-Agel, et al., Structure and properties of the Mn doped CeO2 thin film grown on LaAlO3 (001) via a modified sol–gel spin-coating technique, J. Alloys Compd. 640 (2015) 122-127.

DOI: 10.1016/j.jallcom.2015.04.052

[6] C. Mansuy, E. Tomasella, R. Mahiou, et al., Surface characterization of sol-gel derived scintillating rare-earth doped Lu2SiO5 thin films, J. Phys: Conf. Ser. 100 (2008) 012037.

DOI: 10.1088/1742-6596/100/1/012037

[7] X. Liu, Y. Fan, S. Chen, et al., Luminescence properties of Li-codoped Lu2SiO5: Ce thin-film phosphors prepared by sol–gel processing, Mater. Res. Bull. 48 (2013) 2370-2374.

DOI: 10.1016/j.materresbull.2013.02.072

[8] M. Gu, L. Jia, X. Liu, et al., Luminescent properties of Na-codoped Lu2SiO5: Ce phosphor, J. Alloys Compd. 502 (2010) 190-194.

DOI: 10.1016/j.jallcom.2010.04.141

[9] C. Shi, B. Liu, G. Zhang, et al., Temperature dependence of luminescence from scintillator LSO: Ce under VUV excitation, J. Electron. Spectrosc. Relat. Phenom. 144-147 (2005) 905-908.

DOI: 10.1016/j.elspec.2005.01.274

[10] I. J. Joye, G. Davidov-Pardo, R. D. Ludescher, et al., Fluorescence quenching study of resveratrol binding to zein and gliadin: Towards a more rational approach to resveratrol encapsulation using water-insoluble proteins, Food Chem. 185 (2015).

DOI: 10.1016/j.foodchem.2015.03.128

[11] C. Vargas-Hernández, N. E. Sánchez-Ospina, D. C. Gálvez-Coy, Temperature dependence of the photoluminescence energy of CdTe/ZnTe heterostructures, Mater. Sci. Semicond. Process. 37 (2015) 73-81.

DOI: 10.1016/j.mssp.2015.02.006

[12] A. Novoselov, H. Ogino, A. Yoshikawa, et al., Study on crystal growth and luminescence properties of Pr-doped RE2SiO5 (RE = Y, Lu), J. Cryst. Growth 287 (2006) 309-312.

DOI: 10.1016/j.jcrysgro.2005.11.028