Paper Titles
Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals
p.97
Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
p.101
Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
p.105
Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
p.109
The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method
p.113
Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
p.119
Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer
p.125
Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor
p.129
Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substrates
p.133

The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method

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Abstract:

The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The grown crystal in porous graphite inserted crucible showed the lower intensity of Al, B and Ti impurity concentration than SiC crystal grown in conventional crucible. The porous graphite plate before and after the growth process has been investigated by a Raman spectroscopy and a photoluminescence spectrum (PL). According to the analysis result, it was confirmed that the porous graphite plate had the effect of suppressing impurities supplied to SiC single crystal during the growth process.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

113-116

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.113

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Online since:

May 2016

Authors:

Hee Won Shin, Hee Jun Lee, Hwang Ju Kim, Dong Hoon Lee, Mi Seon Park, Yeon Suk Jang, Won Jae Lee*, Im Gyu Yeo, Myong Chuel Chun, Si Hyun Lee, Jung Gon Kim

Keywords:

Crystal Quality, Physical Vapor Transport (PVT), Porous Graphite, SiC Crystal Growth

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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