Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer

Robin Karhu; Ian Booker; Ivan G. Ivanov; Erik Janzén; Jawad Hassan

doi:10.4028/www.scientific.net/MSF.858.125

Paper Titles

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
p.105

Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
p.109

The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method
p.113

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
p.119

Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer
p.125

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor
p.129

Improvement of 4H-SiC Epitaxial Layers Grown on 2^o Offcut Si-Face Substrates
p.133

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
p.137

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications
p.143

HomeMaterials Science ForumMaterials Science Forum Vol. 858Long Charge Carrier Lifetime in As-Grown 4H-SiC...

Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer

Abstract:

Over 150 μm thick epilayers of 4H-SiC with long carrier lifetime have been grown with a chlorinated growth process. The carrier lifetime have been determined by time resolved photoluminescence (TRPL), the lifetime varies a lot between different areas of the sample. This study investigates the origins of lifetime variations in different regions using deep level transient spectroscopy (DLTS), low temperature photoluminescence (LTPL) and a combination of KOH etching and optical microscopy. From optical microscope images it is shown that the area with the shortest carrier lifetime corresponds to an area with high density of structural defects.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

125-128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.125

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Online since:

May 2016

Authors:

Robin Karhu*, Ian Booker, Ivan G. Ivanov, Erik Janzén, Jawad Hassan

Keywords:

Carrier Lifetime, Chemical Vapor Deposition (CVD), Chlorine, Epitaxy

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References

[1] M. E. Levinshtein, T. T. Mnatsakanov, P. Ivanov, J. W. Palmour, Paradoxes, of carrier lifetime measurements in high-voltage SiC diodes, IEEE Trans. Electron Devices 48 (2001) 1703-1710.

DOI: 10.1109/16.936692

Google Scholar

[2] J. Hassan and J. P. Bergman, Influence of structural defects on carrier lifetime in 4H-SiC epitaxial layers: Optical lifetime mapping, Journal of Appl. Phys. 105 (2009) 123518.

DOI: 10.1063/1.3147903

Google Scholar

[3] N.T. Son, X. T. Trinh, L. S. Løvlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzén, Negative-U System of Carbon Vacancy in 4H-SiC, Phys. Rev. Lett. 109 (2012) 187603.

DOI: 10.1103/physrevlett.109.187603

Google Scholar

[4] P.B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris and M. J. O'Loughlin, Lifetime-limiting defects in n- 4H-SiC epilayers, Appl. Phy. Lett. 88 (2006) 052110.

DOI: 10.1063/1.2170144

Google Scholar

[5] I. D. Booker, J. Hassan, L. Lilja, F. C. Beyer, R. Karhu, J. P. Bergman, Ö. Danielsson, O. Kordina, E. Ö. Sveinbjörnsson, E. Janzén, Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC, Cryst. Growth Des. 14 (2014).

DOI: 10.1021/cg5007154

Google Scholar

[6] J. Hassan, I. D. Booker, L. Lilja, A. Hallén, M. Fagerlind, P. Bergman, E. Janzén, On-Axis Homoepitaxial Growth of 4H-SiC PiN structure for High Power Applications. Mat. Sci. Forum, 740-742 (2013) 173-176.

DOI: 10.4028/www.scientific.net/msf.740-742.173

Google Scholar