Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications

Abstract:

In this work, we report the growth of a 3C-SiC layer oriented along the [111] direction on Si (110)/3C-SiC(001)/Si (001) heterostructure. The growth of the complete layer stack occurs in one deposition run in a Chemical Vapor Deposition (CVD) reactor on on-axis Si (001) substrate. The structural properties of the 3CSiC(111) layer are discussed and the impact of the first 3C-SiC layer on the subsequent growth is highlighted. The 3C-SiC(111) top layer shows two domains rotated by 90o around the growth direction directly linked to the domains rotation in the Si epilayer underneath it. Furthermore, μtwins and stacking faults are present on the inclined (111) planes in the 3C-SiC epilayer.

• Periodical: Materials Science Forum (Volume 858)
• Pages: 143-146
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.143
• Online since: May 2016
• Authors: Rami Khazaka*, Marc Portail, Philippe Vennéguès, Daniel Alquier, Jean François Michaud
• Keywords: Cubic Silicon Carbide (3C-SiC), Heteroepitaxial Growth, Silicon, TEM, XRD

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