Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate

Véronique Soulière; Davy Carole; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.858.155

Paper Titles

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
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Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications
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Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
p.147

3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates
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Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate
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Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer
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4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
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Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
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Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Optimization of the Silicidation and Growth...

Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate

Abstract:

This work reports on the CVD heteroepitaxial growth of 3C-SiC layers on diamond (100) substrates. To obtain good layer quality, the growth procedure involves a “silicidation” step consisting in depositing a silicon layer by CVD on the diamond substrate, in order to elaborate a very thin SiC buffer layer. 3C-SiC growth is then performed on this SiC seeding layer. Silicidation and growth parameters have been studied in order to improve the quality and the morphology uniformity of the heteroepitaxial layer. The study points out the role of liquid silicon during the growth process.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.155

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Online since:

May 2016

Authors:

Véronique Soulière*, Davy Carole, Gabriel Ferro

Keywords:

3C-SiC, Buffer Layer, Chemical Vapor Deposition (CVD), Diamond Substrate, Heteroepitaxy, Silicidation

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