Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

Michael O'Loughlin; Albert Burk; Denis Tsvetkov; Scott Ustin; John W. Palmour

doi:10.4028/www.scientific.net/MSF.858.167

Paper Titles

3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates
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Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate
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Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer
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4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
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Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
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Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
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Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters
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Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
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Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Advances in 3x150 mm Hot-Wall and 6x150 mm...

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

Abstract:

Initial results from a custom, 3x150 mm horizontal hot-wall, SiC Vapor-Phase epitaxial growth reactor (VPE), with full planetary motion are reported. Epitaxial layer properties are compared with those grown on previously reported 1x150 mm hot-wall and 6x150 mm warm-wall reactors for epitaxial wafers of up to 100 microns thickness. The median intra-wafer thickness and doping uniformity (σ/mean) for the 3x150 mm reactor are 0.9% and 6.10%, respectively. The intra-run thickness and doping variation are 0.18% and 1.01%. The projected 5x5 mm useable area for layers of nominal 5 to 30 μm thickness for all the reactor configurations (as measured by a Candela CS2 optical surface analyzer) are approximately 92%, corresponding to an effective defect density of about 0.35 cm^-2. Useable areas as high as 86.5% and 1-2 nm rms roughness have been observed for layers of over 100 μm thickness. Initial morphological results using a higher resolution, LaserTec SICA6X confocal differential interference contrast (CDIC) microscope, are also presented.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

167-172

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.167

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Online since:

May 2016

Authors:

Michael O'Loughlin, Albert Burk*, Denis Tsvetkov, Scott Ustin, John W. Palmour

Keywords:

150 mm Diameter, Epitaxy SiC, Hot-Wall Reactor

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