Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

Shi Yang Ji; Kazutoshi Kojima; Ryoji Kosugi; Shingo Saito; Yuuki Sakuma; Yasuko Matsukawa; Yoshiyuki Yonezawa; Sadafumi Yoshida; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.858.181

Paper Titles

4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
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Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
p.167

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
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Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters
p.177

Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
p.181

Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface
p.185

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
p.189

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC
p.193

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
p.197

HomeMaterials Science ForumMaterials Science Forum Vol. 858Effect of H2 Carrier Gas on CVD Growth Rate for...

Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

Abstract:

The effect of H₂ carrier gas on the growth rate during the trench filling using CVD epitaxial growth was investigated in a wide pressure range (10∼38 kPa). It is found that, in the entire pressure range, reducing H₂ flow rate can increase the filling rate (the growth rate inside trench) and the filling efficiency (the thickness ratio between epilayer on trench bottom and mesa top), which means a high productivity and a low risk of void defects. The filling rate and efficiency of ∼1.5 μm/h and ∼18 respectively was achieved at 38 kPa.

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Silicon Carbide and Related Materials 2015

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Materials Science Forum (Volume 858)

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181-184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.181

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Online since:

May 2016

Authors:

Shi Yang Ji*, Kazutoshi Kojima, Ryoji Kosugi, Shingo Saito, Yuuki Sakuma, Yasuko Matsukawa, Yoshiyuki Yonezawa, Sadafumi Yoshida, Hajime Okumura

Keywords:

4H-SiC, Carrier Gas, Epitaxial Growth, Filling Efficiency, Filling Rate, Growth Pressure, Hot-Wall CVD, Hydrogen Flow, P/N Column, Super Junction, Trench Filling

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