Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

Yong Qiang Sun; Gan Feng; Jun Yong Kang; Wei Ning Qian; Li Ping Lv; Yi Yang Li; Kai Xi Li; Jian H. Zhao

doi:10.4028/www.scientific.net/MSF.858.193

Paper Titles

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters
p.177

Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
p.181

Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface
p.185

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
p.189

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC
p.193

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
p.197

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
p.201

Optimization of VLS Growth Process for 4H-SiC P/N Junctions
p.205

Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
p.209

HomeMaterials Science ForumMaterials Science Forum Vol. 858Formation and Reduction of Large Growth Pits on...

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

Abstract:

The large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, the perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.