Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters

Rahul Radhakrishnan; Tony Witt; Seungchul Lee; Richard Woodin

doi:10.4028/www.scientific.net/MSF.858.177

Paper Titles

Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer
p.159

4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
p.163

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
p.167

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
p.173

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters
p.177

Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
p.181

Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface
p.185

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
p.189

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC
p.193

HomeMaterials Science ForumMaterials Science Forum Vol. 858Design of Silicon Carbide Devices to Minimize the...

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters

Abstract:

Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation and hence the process yield.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.177

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Online since:

May 2016

Authors:

Rahul Radhakrishnan*, Tony Witt, Seungchul Lee, Richard Woodin

Keywords:

Diode, Doping, Epitaxy, Junction Barrier Schottky (JBS) Diode, Schottky, Silicon Carbide (SiC), Thickness, Variation

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References

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