Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

Hideyuki Uehigashi; Keisuke Fukada; Masahiko Ito; Isaho Kamata; Hiroaki Fujibayashi; Masami Naitou; Kazukuni Hara; Hitoshi Osawa; Takahiro Kozawa; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.858.173

Paper Titles

Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate
p.155

Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer
p.159

4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
p.163

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
p.167

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
p.173

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters
p.177

Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
p.181

Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface
p.185

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
p.189

HomeMaterials Science ForumMaterials Science Forum Vol. 858Analysis and Reduction of Stacking Faults in Fast...

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

Abstract:

We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the characteristics of devices, we investigated the formation of variety of in-grown stacking faults (SFs) in detail. Synchrotron X-ray topography, photoluminescence (PL) and transmission electron microscopy are employed to analyze the SFs and the origins of the SF formation are discussed. The result in reducing in-grown SFs in fast epitaxial growth is also shown.