Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

Gan Feng; Yong Qiang Sun; Wei Ning Qian; Li Ping Lv; Jian H. Zhao; D. Tsai; M. Raghunathan; Y. Fei

doi:10.4028/www.scientific.net/MSF.858.189

Paper Titles

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
p.173

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters
p.177

Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
p.181

Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface
p.185

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
p.189

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC
p.193

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
p.197

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
p.201

Optimization of VLS Growth Process for 4H-SiC P/N Junctions
p.205

HomeMaterials Science ForumMaterials Science Forum Vol. 858Elimination of BPD in 5~30um Thick 4H-SiC...

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

Abstract:

The process of the epitaxial growth of 4H-SiC has been optimized to obtain higher ratio of conversion of BPDs to the TEDs on 100 mm substrates in a warm-wall planetary reactor. 100% BPD conversion ratio was successfully obtained with excellent surface morphology under optimized growth process. The high efficiency of the optimized growth process in BPD conversion is independent of the initial surface conditions and BPD density of the substrates.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

189-192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.189

Citation:

Cite this paper

Online since:

May 2016

Authors:

Gan Feng*, Yong Qiang Sun, Wei Ning Qian, Li Ping Lv, Jian H. Zhao, D. Tsai, M. Raghunathan, Y. Fei

Keywords:

100 mm Substrates, 4H-SiC Epitaxial Growth, Basal Plane Dislocations (BPDs), Warm-Wall Planetary Reactor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lendefelt, and P. Skytt, Mater. Sci. Forum 353-356, 299 (2001).

Google Scholar

[2] M. Skowronski and S. Ha, J. Appl. Phys., 99, 011101 (2006).

Google Scholar

[3] J.J. Sumakeris, J.R. Jenny, and A.R. Powell, Mater. Res. Soc. Bulletin, 30, 280 (2005).

Google Scholar

[4] B. L. VanMil, R. E. Stahlbush, R. L. Myers-Ward, K. -K. Lew, C. R. Eddy, Jr. and D. K. Gaskill, J. Vac. Sci. Technol. B 26, 1504 (2008).

DOI: 10.1116/1.2918317

Google Scholar

[5] T. Tanaka, N. Kawabata, Y. Mitani, N. Tomita, M. Tarutani, T. Kuroiwa, Y. Toyoda, M. Imaizumi, H. Sumitani, and S. Yamakawa, Mater. Sci. Forum, 778-780, 91 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.91

Google Scholar

[6] Y.Q. Sun, G. Feng, Z.Y. Li, L.P. Lv, J.Y. Luo, J.B. Wu, Y.Y. Li, and J.H. Zhang, Mater. Sci. Forum, 778-780, 163 (2014).

Google Scholar

[7] G. Feng, J. Suda, and T. Kimoto, J. Appl. Phys., 110, 033525 (2011).

Google Scholar