Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality

Tatsuya Masuda; Akira Miyasaka; Jun Norimatsu; Yutaka Tajima; Daisuke Muto; Kenji Momose; Hitoshi Osawa

doi:10.4028/www.scientific.net/MSF.858.201

Paper Titles

Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface
p.185

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
p.189

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC
p.193

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
p.197

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
p.201

Optimization of VLS Growth Process for 4H-SiC P/N Junctions
p.205

Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
p.209

Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes
p.213

Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method
p.217

HomeMaterials Science ForumMaterials Science Forum Vol. 858Improvement on 150 mm 4H-SiC Epitaxial Wafer...

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality

Abstract:

For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is inevitable. With highly productive 8x150-mm CVD reactor, we have grown epitaxial layer on 4° off 4H-SiC wafer Si-and C-face. Modifying some reactor parts and optimizing growth conditions enabled us to achieve a good balance between high uniformity and smooth surface.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

201-204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.201

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Online since:

May 2016

Authors:

Tatsuya Masuda*, Akira Miyasaka, Jun Norimatsu, Yutaka Tajima, Daisuke Muto, Kenji Momose, Hitoshi Osawa

Keywords:

150 mm Diameter, 4H-SiC Epitaxial Growth, C-Face, Surface Defect, Surface Morphology, Uniformity

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References

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