Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes

Koji Kamei; Ling Guo; Kenji Momose; Hitoshi Osawa

doi:10.4028/www.scientific.net/MSF.858.213

Paper Titles

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
p.197

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
p.201

Optimization of VLS Growth Process for 4H-SiC P/N Junctions
p.205

Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
p.209

Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes
p.213

Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method
p.217

Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
p.221

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates
p.225

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC
p.229

HomeMaterials Science ForumMaterials Science Forum Vol. 858Structure of Straight-Line Defect and its Effect...

Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes

Abstract:

We have investigated the “straight-line defect,” which has not been classified separately and is quite similar to the carrot defect. We found that the straight-line defect differed structurally from the carrot defect. The presence of a particle on the substrate-epi layer interface seemed to be the cause of the defect; a layer of poly-type (3C-SiC) extended from the particle to the epi-layer surface. The straight-line defect likely resulted from shape change from the 3C-SiC triangular defect. This change in shape from triangular to straight-line defects depended on the C/Si ratio. To investigate the electrical characteristics, we fabricated a Schottky barrier diode (SBD) structure on a silicon carbide (SiC) epi wafer. With application of a high voltage, destruction occurred on both the upstream and the downstream side of the step flow of straight-line defects in the reverse voltage test. This reverse direction characteristic differed from that observed with triangular defects.