Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)

Abstract:

The Si/SiC heterojunctions were prepared on 6H-SiC(0001) by low-pressure chemical vapour deposition at 900°C. X-ray diffraction was employed to investigate the in-plane orientation of Si/SiC heterojunctions. A FCC-on-HCP parallel epitaxy was achieved for the Si(111)/SiC(0001) heterostructure with a growth temperature of 900°C and the in-plane orientation relationship was [01-1]_Si//[11-20]_6H-SiC. Based on the in-plane orientation characterizations, the lattice-structure model of the Si/6H-SiC heterostructure was constructed. It is shown that when the in-plane orientation was (111)[01-1]_Si//(0001)[11-20]_6H-SiC, the Si/6H-SiC interface had a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%, and the misfit dislocation density at the Si/SiC interface was calculated as 0.487×10¹⁴cm^-2.

• Periodical: Materials Science Forum (Volume 858)
• Pages: 221-224
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.221
• Online since: May 2016
• Authors: Lian Bi Li*, Zhi Ming Chen
• Keywords: Epitaxial Growth, In-Plane Orientation, Si/6H-SiC Heterostructure, XRD Phi Scan

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