In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor

Kosuke Mizuno; Hitoshi Habuka; Yuuki Ishida; Toshiyuki Ohno

doi:10.4028/www.scientific.net/MSF.858.237

Paper Titles

Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
p.221

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates
p.225

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC
p.229

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
p.233

In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor
p.237

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption
p.245

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
p.249

Density-Functional Calculation of Carbon-Interstitial Energies in a 4H-SiC(0001)-SiO₂ Interface
p.253

Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study
p.257

HomeMaterials Science ForumMaterials Science Forum Vol. 858In Situ Cleaning Process of Silicon Carbide...

In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor

Abstract:

The in situ cleaning process of a silicon carbide epitaxial reactor was developed using chlorine trifluoride gas for removing the film-type silicon carbide deposition formed on a susceptor. By adjusting the etching temperature to less than 330 °C, the formed silicon carbide films could be removed without significant damage to the susceptor.