Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

Hassan Hamad; Christophe Raynaud; Pascal Bevilacqua; Sigo Scharnholz; Bertrand Vergne; Dominique Planson

doi:10.4028/www.scientific.net/MSF.858.245

Paper Titles

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates
p.225

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC
p.229

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
p.233

In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor
p.237

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption
p.245

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
p.249

Density-Functional Calculation of Carbon-Interstitial Energies in a 4H-SiC(0001)-SiO₂ Interface
p.253

Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study
p.257

Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory
p.261

HomeMaterials Science ForumMaterials Science Forum Vol. 858Determination of 4H-SiC Ionization Rates Using...

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

Abstract:

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm^–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.