The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

Wei Yu Chen; Han Chieh Ho; Po Fei Yang; Liang Choo Hsia

doi:10.4028/www.scientific.net/MSF.858.229

Paper Titles

Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes
p.213

Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method
p.217

Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
p.221

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates
p.225

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC
p.229

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
p.233

In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor
p.237

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption
p.245

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
p.249

HomeMaterials Science ForumMaterials Science Forum Vol. 858The Relationship between Surface Pits Density and...

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

Abstract:

In this study, different parameters of 4H-SiC epitaxial growth were used to investigate the influence on surface pits density. It was found that the density of surface pits can be reduced significantly at lower C/Si ratio condition but doping uniformity became worse simultaneously. The background doping was higher than 2E15 cm^-³ when C/Si ratio was lower than 1.0. Influences of growth temperature and growth rate are also discussed. The lower surface pits density 4H-SiC epilayer with good uniformity (s/mean below 2%) can be realized during optimal condition.