Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

Ren Wei Zhou; Xue Chao Liu; Hui Jun Guo; Hai Kuan Kong; Er Wei Shi

doi:10.4028/www.scientific.net/MSF.858.225

Paper Titles

Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
p.209

Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes
p.213

Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method
p.217

Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
p.221

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates
p.225

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC
p.229

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
p.233

In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor
p.237

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption
p.245

HomeMaterials Science ForumMaterials Science Forum Vol. 858Study of Triangle-Shaped Defects on Nearly On-Axis...

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

Abstract:

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

225-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.225

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Online since:

May 2016

Authors:

Ren Wei Zhou, Xue Chao Liu*, Hui Jun Guo, Hai Kuan Kong, Er Wei Shi

Keywords:

Epitaxial Growth, On-Axis Substrate, Silicon Carbide (SiC), Triangle-Shaped Defects

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