Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates

Louise Lilja; Jawad Hassan; Erik Janzén; J. Peder Bergman

doi:10.4028/www.scientific.net/MSF.858.209

Paper Titles

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC
p.193

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
p.197

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
p.201

Optimization of VLS Growth Process for 4H-SiC P/N Junctions
p.205

Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
p.209

Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes
p.213

Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method
p.217

Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
p.221

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates
p.225

HomeMaterials Science ForumMaterials Science Forum Vol. 858Smooth 4H-SiC Epilayers Grown with High Growth...

Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates

Abstract:

4H-SiC epilayers with very smooth surfaces were grown with high growth rates on 4° off-cut substrates using standard silane/propane chemistry. Specular surfaces with RMS values below 0.2 nm are presented for epilayers grown with growth rates up to 30 μm/h using horizontal hot-wall chemical vapor deposition, with up to 100 μm thickness. Optimization of in-situ etching conditions and C/Si ratio are presented.

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Materials Science Forum (Volume 858)

Pages:

209-212

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https://doi.org/10.4028/www.scientific.net/MSF.858.209

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Online since:

May 2016

Authors:

Louise Lilja, Jawad Hassan, Erik Janzén, J. Peder Bergman*

Keywords:

Atomic Force Microscopy (AFM), Chemical Vapor Deposition (CVD), Epitaxial Growth, Silicon Carbide (SiC)

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