Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method

Hui Jun Guo; Wei Huang; Jun Peng; Ren Wei Zhou; Xue Chao Liu; Yan Qing Zheng; Er Wei Shi

doi:10.4028/www.scientific.net/MSF.858.217

Paper Titles

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions
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Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
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Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes
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Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method
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Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
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Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates
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The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC
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Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Study of Ehrlich-Schwoebel Barrier in 4H-SiC...

Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method

Abstract:

A molecular statics method has been used to examine the Ehrlich-Schwoebel (ES) barrier for an adatom of 4H-SiC to diffuse from the {0001} to the {11-20} facet. As the calculated results shown, for the C-terminated surface, the inverse ES barrier exist for the silicon adatom, which could cause the step bunching; for the Si-terminated surface, ES barrier exist for the carbon adatom, which could cause the step meandering and result in the transition of step-flow growth to 2D-nucleation growth. Simultaneously, the C-terminated surface is more stable than the Si-terminated surface, which may be one reason that the quality of film grown on the carbon facet substrate is better.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

217-220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.217

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Online since:

May 2016

Authors:

Hui Jun Guo, Wei Huang*, Jun Peng, Ren Wei Zhou, Xue Chao Liu, Yan Qing Zheng, Er Wei Shi

Keywords:

4H-SiC, ES Barrier, Molecular Statics, Quality, Step Bunching, Step Meandering

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