Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substrates

Hirokuni Asamizu; Keiichi Yamada; Kentaro Tamura; Chiaki Kudou; Johji Nishio; Keiko Masumoto; Kazutoshi Kojima

doi:10.4028/www.scientific.net/MSF.858.133

Paper Titles

The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method
p.113

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
p.119

Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer
p.125

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor
p.129

Improvement of 4H-SiC Epitaxial Layers Grown on 2^o Offcut Si-Face Substrates
p.133

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
p.137

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications
p.143

Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
p.147

3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates
p.151

HomeMaterials Science ForumMaterials Science Forum Vol. 858Improvement of 4H-SiC Epitaxial Layers Grown on 2o...

Improvement of 4H-SiC Epitaxial Layers Grown on 2^o Offcut Si-Face Substrates

Abstract:

The surface quality of epitaxial layers grown on 2° offcut substrates was improved. These substrates require a lower growth temperature and a lower C/Si ratio than their 4° offcut counterparts to suppress macro step bunching. Surface morphology, triangular defect density, and doping uniformity presented a trade-off relationship with respect to growth parameters. The implementation of a low C/Si ratio buffer layer led to a balance between surface defect density, which reached a minimum of 0.2 cm⁻², and good doping uniformity on an equivalent wafer size (150 mm). An evaluation of metal–oxide–semiconductor capacitors and Schottky barrier diodes fabricated on 2° offcut epitaxial layers showed that the quality of these epitaxial layers was satisfactory for application in devices.

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Materials Science Forum (Volume 858)

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133-136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.133

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Online since:

May 2016

Authors:

Hirokuni Asamizu, Keiichi Yamada, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Keiko Masumoto, Kazutoshi Kojima*

Keywords:

Chemical Vapor Deposition (CVD), Epitaxy, Silicon Carbide (SiC), Step Bunching, Triangular Defect

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