Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

Hidekazu Tsuchida; Isaho Kamata; Masahiko Ito; Tetsuya Miyazawa; Hideyuki Uehigashi; Keisuke Fukada; Hiroaki Fujibayashi; Masami Naitou; Kazukuni Hara; Hitoshi Osawa; Toshikazu Sugiura; Takahiro Kozawa

doi:10.4028/www.scientific.net/MSF.858.119

Paper Titles

Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
p.101

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
p.105

Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
p.109

The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method
p.113

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
p.119

Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer
p.125

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor
p.129

Improvement of 4H-SiC Epitaxial Layers Grown on 2^o Offcut Si-Face Substrates
p.133

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
p.137

HomeMaterials Science ForumMaterials Science Forum Vol. 858Advances in Fast Epitaxial Growth of 4H-SiC and...

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

Abstract:

This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertical single-wafer type SiC epitaxial reactor is employed and high-speed wafer rotation is confirmed as effective, not only for enhancing growth rates without increasing the source gas supply but also improving thickness and doping uniformities. The current levels of reducing particle-induced defects, in-grown stacking faults, basal plane dislocations and the Z_1/2 center (carbon vacancies) are reviewed.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

119-124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.119

Citation:

Cite this paper

Online since:

May 2016

Authors:

Hidekazu Tsuchida*, Isaho Kamata, Masahiko Ito, Tetsuya Miyazawa, Hideyuki Uehigashi, Keisuke Fukada, Hiroaki Fujibayashi, Masami Naitou, Kazukuni Hara, Hitoshi Osawa, Toshikazu Sugiura, Takahiro Kozawa

Keywords:

Defects, Dislocation, Epitaxial Growth, Growth Rate, Lifetime, Stacking Faults, Uniformity

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] H. Fujibayashi, M. Ito, H. Ito, I. Kamata, M. Naito, K. Hara, S. Yamauchi, K. Suzuki, M. Yajima, S. Mitani, K. Suzuki, H. Aoki, K. Nishikawa, T. Kozawa, H. Tsuchida, Appl. Phys. Express 7 (2014) 015502.