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Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals

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Abstract:

Structural transformation from threading screw dislocations (TSDs) to stacking faults (SFs) has been investigated for PVT-grown 4H-SiC single crystals using X-ray topography and transmission electron microscopy (TEM). The transformation of TSDs is induced by the structural interference with bunched surface macrosteps over 100 nm in height. The stacking sequence of a SF was determined to be (433) in Zadanov's notation by using high-resolution TEM. Our detailed analyses revealed that the (433) stacking structure can be constructed by a combination of five faults including both four Frank type faults and one Shockley type fault.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

97-100

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.97

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Online since:

May 2016

Authors:

Shinya Sato*, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Masashi Nakabayashi, Shoji Ushio, Komomo Tani, Takayuki Yano

Keywords:

4H-SiC, PVT Growth, Silicon Carbide (SiC), Stacking Faults, Threading Screw Dislocations (TSDs)

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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