Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents

Yun Ji Shin; Kanaparin Ariyawong; Beatrice Doisneau; Jean Marc Dedulle; Pierre Brosselard; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.858.81

Paper Titles

Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals
p.65

Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method
p.69

Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
p.73

Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77

Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81

Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
p.85

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
p.89

Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli
p.93

Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals
p.97

HomeMaterials Science ForumMaterials Science Forum Vol. 858Experimental Investigation of the Seeding Stage...

Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents

Abstract:

In this work, we have investigated the seeding stage of 4H-SiC top seeded solution growth through the systematic observation of surface morphologies and numerical simulation. Different growth temperatures, C- and Si-polarities, and different solvents have been studied. This is the first report of transient nucleation of parasitic 3C-SiC at the early stage of solution growth in pure Si solvent even at high temperature. This unusual phenomenon was attributed to a huge temperature difference between the seed crystal and solvent surface at the seeding stage. We demonstrated that preheating of the seed crystals or addition of Al were effective to prevent such parasitic 3C-SiC nucleation.