Paper Titles
Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
p.57
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
p.61
Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals
p.65
Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method
p.69
Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
p.73
Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77
Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81
Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
p.85
Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
p.89

Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals

Article Preview

Abstract:

Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2015 View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

73-76

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.73

Citation:

Cite this paper

Online since:

May 2016

Authors:

Komomo Tani*, Tatsuo Fujimoto, Kazuhito Kamei, Kazuhiko Kusunoki, Kazuaki Seki, Takayuki Yano

Keywords:

Basal Plane Dislocations (BPDs), Dislocation Network, Stacking Faults, TED

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] A. Gupta, P. Wu, V. Rengarajan, X. Xu, M. Yoganathan, C. Martin, E. Emorhokpor, A. Souzis, I. Zwieback and T. Anderson, Mater. Res. Soc. Symp. Proc., 1246, (2010) B01-01.

DOI: 10.1557/proc-1246-b01-01

Google Scholar

[2] M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge, H. Yashiro, T. Aigo, T. Hoshino, H. Hirano, K. Tatsumi, Mater. Sci. Forum, 600-603, (2009) 3-6.

DOI: 10.4028/www.scientific.net/msf.600-603.3

Google Scholar

[3] B. Kallinger, S. Polster, P. Berwian, J. Friedrich, G. Müller, A. N. Danilewsky, A. Wehrhahn, A. -D. Weber,. J. Cryst. Growth, 314, (2011) 21-29.

DOI: 10.1016/j.jcrysgro.2010.10.145

Google Scholar

[4] T. Matsumoto, S. Nishizawa, S. Yamasaki, Mater. Sci. Forum, 645-648, (2010) 247-250.

Google Scholar

[5] N. Ohtani, C. Ohshige, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, W. Ohashi, T. Yano, H. Matsuhata, M. Kitabatake, J. Cryst. Growth, 386, (2014) 9.

DOI: 10.1016/j.jcrysgro.2013.09.026

Google Scholar

[6] M. Dudley, F. Wu, H. Wang, S. Byrappa, B. Raghothamachar, G. Choi, S. Sun, E. K. Sanchez, D. Hansen, R. Drachev, S. G. Mueller, M.J. Loboda, Appl. Phys. Lett., 98, (2011) 232110.

Google Scholar

[7] K. Tani, T. Fujimoto, et al., (To be submitted).

Google Scholar