Paper Titles
150 mm 4H-SiC Substrate with Low Defect Density
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A Competitive Lattice Model Monte Carlo Method for Simulation of Competitive Growth of Different Polytypes in SiC Single Crystal
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Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions
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Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
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Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
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Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
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Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals
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Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method
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Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
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Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method

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Abstract:

We investigated the spatial distribution of carrier concentration in n-type 4H-SiC grown by the solution method from the peak frequency of the longitudinal optical phonon-plasmon coupled (LOPC) mode of the Raman spectra on the surface. The carrier concentration at the position of the smooth terrace was higher than the carrier concentration at the position where the macrosteps were formed. This indicates the nitrogen incorporation efficiently occurs on the smooth surface where the density of macrosteps is relatively low. The different incorporation of nitrogen depending on the surface morphology can be understood from the view point of the adsorption time of impurity on the terrace. The present result implies that the uniform surface morphology is necessary to achieve uniform doping concentration in SiC crystal.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

57-60

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.57

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Online since:

May 2016

Authors:

Zhen Jiang Wang*, Takahiko Kawaguchi, Kenta Murayama, Kenta Aoyagi, Shunta Harada, Miho Tagawa, Takenobu Sakai, Tomohisa Kato, Toru Ujihara

Keywords:

Bulk Growth 4H-SiC, Carrier Concentration, Nitrogen Doping, Solution Growth, Surface Morphology

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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