Paper Titles
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
p.29
High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C
p.33
Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
p.37
150 mm 4H-SiC Substrate with Low Defect Density
p.41
A Competitive Lattice Model Monte Carlo Method for Simulation of Competitive Growth of Different Polytypes in SiC Single Crystal
p.45
Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions
p.49
Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
p.53
Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
p.57
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
p.61

A Competitive Lattice Model Monte Carlo Method for Simulation of Competitive Growth of Different Polytypes in SiC Single Crystal

Article Preview

Abstract:

A competitive lattice model was developed for the Kinetic Monte Carlo (KMC) simulation of the competition of 4H and 6H polytypes in SiC crystal growth based on the on-lattice model. In the competitive lattice model, site positions are fixed at the perfect crystal lattice positions without any adjustment of the site positions. The effect of surface steps was investigated, and behavior similar to step-controlled homoepitaxy was observed in KMC simulation of PVT grown SiC. Maintaining the step growth mode is an important factor to maintain a stable single polytype during SiC growth.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2015 View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

45-48

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.45

Citation:

Cite this paper

Online since:

May 2016

Authors:

Wei Huang*, Hui Jun Guo, Xi Liu, Xue Chao Liu, Yan Qing Zheng, Jian Hua Yang, Er Wei Shi

Keywords:

Competitive Lattice Model, Kinetic Monte Carlo Simulation, Polytype, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] U. Lindefelt, H. Iwata, S. Öberg, and P.R. Briddon, Phys. Rev. B 67, (2003)155204.

Google Scholar

[2] M. Kanaya, J. Takahashi, Y. Fujiwara, and A. Moritani, Appl. Phys. Lett. 58, (1991)56.

Google Scholar

[3] A. Fissel, J. Cryst. Growth 212, (2000)438.

Google Scholar

[4] T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, Y. Kangawa, and K. Kakimoto, J. Cryst. Growth 352, (2012)177.

DOI: 10.1016/j.jcrysgro.2012.01.023

Google Scholar

[5] E. Schmitt, T. Straubinger, M. Rasp, M. Vogel, and A. Wohlfart, J. Cryst. Growth 310, (2008)966.

Google Scholar

[6] A. Itoh, H. Akita, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 65, (1994)1400.

Google Scholar

[7] T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, and K. Kakimoto, J. Cryst. Growth 385, (2014)95.

Google Scholar

[8] D. Chaussende, M. Ucar, L. Auvray, F. Baillet, M. Pons, and R. Madar, Cryst. Growth Des. 5, (2005)1539.

Google Scholar

[9] R.A. Stein, P. Lanig, and S. Leibenzeder, Mater. Sci. Eng. B, 11, (1992)69.

Google Scholar

[10] G. Dhanaraj, F. Liu, M. Dudley, H. Zhang, and V. Prasad, MRS Proceedings. 815, J5. (2004)31.

Google Scholar

[11] C.C. Battaile, Comput. Methods Appl. Mech. Engrg. 197, (2008)3386.

Google Scholar

[12] M. Camarda, A. La Magna, and F. La Via, J. Comput. Phys. 227, (2007)1075-1093.

Google Scholar

[13] M. Stockmeier, R. Müller, S.A. Sakwe, P.J. Wellmann, and A. Magerl, J. Appl. Phys. 105, (2009)033511.

Google Scholar

[14] X. R. Huang, M. Dudley, W. Cho, R. S. Okojie and P. G. Neudeck, Mater. Sci. Forum 457-460, (2004)157.

Google Scholar

[15] R. F. Xiao, J. Alexander, and F. Rosenberger, Phys. Rev. A 43, (1991)2977.

Google Scholar

[16] H. J. Guo, W. Huang*, et. al., AIP Advances 4, (2014)097106.

Google Scholar

[17] H. J. Guo, W. Huang*, et. al., Computational Materials Science, 100, (2015)159–165.

Google Scholar