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High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C
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Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
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High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C

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Abstract:

We developed a solution growth process related to the combination of the Vertical Bridgman and Vertical Gradient Freeze in a metal free Si-C melt at growth temperatures of 2300 °C. For this procedure we present a detailed description of the growth process and discuss the influence of different growth parameters on the surface morphology and growth rate. So far, we managed to grow SiC layers with a thickness up to 300 μm. The characterization of the crystal morphology was carried out using SEM images and the metal concentration was estimated using SIMS.

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Silicon Carbide and Related Materials 2015 View Preview

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Periodical:

Materials Science Forum (Volume 858)

Pages:

33-36

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.33

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Online since:

May 2016

Authors:

Lars Fahlbusch*, Michael Schöler, Patrick Mattle, Sarah Schnitzer, Hossein Khodamoradi, Naoya Iwamoto, Bengt Gunnar Svensson, Peter J. Wellmann

Keywords:

High Temperature Growth, Metal Free, Silicon Carbide (SiC), Solution Growth, Surface Morphology, Vertical Bridgman, Vertical Gradient Freeze

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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