Paper Titles
Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals
p.19
Developing Technologies of SiC Gas Source Growth Method
p.23
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
p.29
High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C
p.33
Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
p.37
150 mm 4H-SiC Substrate with Low Defect Density
p.41
A Competitive Lattice Model Monte Carlo Method for Simulation of Competitive Growth of Different Polytypes in SiC Single Crystal
p.45
Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions
p.49
Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
p.53

Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC

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Abstract:

Using a sessile drop method, investigation of the surface reconstruction of a Si-face, 4°off (0001) 4H-SiC surface in contact with pure silicon or Al-Si alloys has been carried out in the 1600-1800°C temperature range. In pure silicon and at 1600°C, the surface evolves with a two stage process: i) a fast step-bunching leading to parallel macrosteps and ii) a slower step leading equilibrium morphology, composed of (0001), (10-1n) and (01-1n) facets. Increasing the temperature to 1800°C or adding a few percents of aluminium drastically enhance the first stage, but strongly reduce the second one.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

37-40

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.37

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Online since:

May 2016

Authors:

Didier Chaussende*, Lucile Parent-Bert, Yun Ji Shin, Thierry Ouisse, Takeshi Yoshikawa

Keywords:

Aluminium, Solution Growth, Step Bunching, Surface Morphology, Surfactant

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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