p.45
p.49
p.53
p.57
p.61
p.65
p.69
p.73
p.77
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
Abstract:
This paper investigates the quality of 4H-SiC crystals grown at a very fast growth rate (> 2.5 mm/h) using a high-temperature gas source method. Differences in nitrogen doping efficiency were clarified in facet and step-flow regions. In case for growth in the macro-step bunching mode, doping fluctuation and void formation were observed in the macro-step bunching region. Propagation of threading screw dislocations (TSDs) in the grown crystal was also investigated by synchrotron X-ray topography.
Info:
Periodical:
Pages:
61-64
Citation:
Online since:
May 2016
Price:
Сopyright:
© 2016 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: