Paper Titles
Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions
p.49
Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
p.53
Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
p.57
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
p.61
Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals
p.65
Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method
p.69
Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
p.73
Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77
Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81

Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals

Article Preview

Abstract:

We investigated the effect of the solution flow on crystalline morphology in the off-axis 4H-SiC solution growth. In particular, we focused on the relation between the Si solution flow and step flow directions. In step parallel flow in which the solution drifted transversely to the step flow direction of the off-axis substrate, it was possible to attain a better surface morphology than in the flow in which the solution drifted toward the other direction. Furthermore, it was found that the surface morphology was found to be improved as the solution flow velocity increased. These improvements in the morphological stability are presumed to be caused by aligning the solute concentration fluctuation along the steps.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2015 View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

65-68

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.65

Citation:

Cite this paper

Online since:

May 2016

Authors:

Takashi Kato*, Kazuhiko Kusunoki, Kazuaki Seki, Nobuhiro Okada, Kazuhito Kamei

Keywords:

Off-Axis 4H-SiC, Solution Flow, Surface Morphology, Top-Seeded Solution Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] D.H. Hofmann, M.H. Müller, Mater. Sci. Eng. B 61–62 (1999) 29–39.

Google Scholar

[2] N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino and H. Matsunami, Ext. Abst. 19th Conf. Solid State Devices and Materials, Tokyo (1987) 227.

Google Scholar

[3] Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara, Appl. Phys. Express 5 (2012) 115501.

DOI: 10.1143/apex.5.115501

Google Scholar

[4] K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, T. Tanaka, A. Yauchi, J. Cryst. Growth 311 (2009) 855-858.

DOI: 10.1016/j.jcrysgro.2008.09.142

Google Scholar

[5] M. Maruyama, M. Nakamura, G. Sato, Y. Takahashi, M. Yoshimura, H. Yoshikawa, S. Sugiyama, H. Adachi, H. Matsumura, T. Inoue, K. Takano, S. Murakami, Y. Mori, J. Jpn. Assoc. Cryst. Growth 40, 2 (2013) 72-82.

Google Scholar

[6] C. Zhu, S. Harada, K. Seki, H. Zhang, H. Niinomi, M. Tagawa, T. Ujihara, Cryst. Growth Des. 13 (2013) 3691–3696.

DOI: 10.1021/cg400706u

Google Scholar

[7] K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihara, K. Nakajima, Mater. Sci. Forum 483–485 (2005) 13–16.

DOI: 10.4028/www.scientific.net/msf.483-485.13

Google Scholar

[8] A. A. Chernov, J. Optoelectron. Adv. Mater., 5 (2003) 575−588.

Google Scholar