Paper Titles
Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
p.53
Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
p.57
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
p.61
Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals
p.65
Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method
p.69
Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
p.73
Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77
Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81
Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
p.85

Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method

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Abstract:

In this paper, the effects of hydrogen concentration on growth rate, micropipe density and nitrogen concentration of 4H-SiC crystals were discussed. It was shown that the growth rate is a linear function of the hydrogen concentration, which can be explained not only by C/Si ratio but also the temperature gradient. It was also found that the micropipe density was increased rapidly when the hydrogen concentration exceed a critical value, because the defects such as Si droplets, carbon inclusions and polytype formation were generated at that time. The results of secondary ion mass spectroscopy (SIMS) showed that with increasing the hydrogen concentration, the nitrogen concentration falls down but reaches a constant value which meets the requirements for high purity semi-insulating (HPSI) SiC single crystal growth. Finally, the HPSI 4H-SiC crystals were obtained using 15% hydrogen concentration, the resistivities of wafers cut from these crystals were more than 109Ω•cm, micropipe densities were less than 5cm-2, the full width at the half-maximum (FWHM) were between 30-40 arcsec, making these wafers suitable for microwave devices fabrication.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

69-72

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.69

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Online since:

May 2016

Authors:

Ying Min Wang*, Ru Sheng Wei, Li Zhong Wang, Kai Li Mao, Bin Li, Xin Dai

Keywords:

High Purity 4H-SiC, Hydrogen Concentration, Micropipes Density, Sublimation Method

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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