Paper Titles
Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method
p.69
Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
p.73
Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77
Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81
Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
p.85
Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
p.89
Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli
p.93
Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals
p.97
Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
p.101

Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth

Article Preview

Abstract:

SiC powders having different purities were prepared by carbothermal reduction under different conditions from traditional process and SiC single crystals were grown by the PVT method from the powders. After crystal growth, boule was cut to wafers and they were polished for chemical and defect analyses. Total impurities including Al, B and Ti which were derived from powders decreased remarkably during crystal growth. The formation of defects including micropipe and dislocations such as TED, TSD and BPD was strongly influenced by impurity content. The effect of impurity seemed to be negligible at below 1ppm level for MPD. On the other hand, dislocations continuously decreased even more when higher purity SiC powder below 1ppm level was used.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2015 View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

85-88

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.85

Citation:

Cite this paper

Online since:

May 2016

Authors:

S. Heo, H.R. Son, Byung Sook Kim, M.S. Kim, J.E. Han, Dong Hoon Lee, K.S. Min, S.I. Kim, S. Ha, Dong Geun Shin*

Keywords:

Crystal Growth, Defects, Energy Efficiency, Impurity, SiC Single Crystal, Ultra-High Purity SiC Powder

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] http: /www. Semiconductor-today. com/news_items/2014/OCT/YOLE.

Google Scholar

[2] S. Ha, H.J. Chung, N.T. Nuhfer and M. Skowronski, J. Cryst. Growth, 262 (2004) 130-138.

Google Scholar

[3] D-G. Shin, H-R. Son, S. Heo, B-S. Kim, J-E. Han, K-S. Min and D-H. Lee, Mater. Sci. Forum, 778-780 (2014) 22-25.

Google Scholar

[4] N. Ohtani, M. Katsuno, H. Tsuge, T. Fujimoto, M. Nakabayashi, H. Yashiro, M. Sawamura, T. Aigo and T. Hoshino, Microelectronic Engineering, 83 (2006) 142-145.

DOI: 10.1016/j.mee.2005.10.048

Google Scholar

[5] Jaewon Lee, PhD thesis (2008).

Google Scholar