Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli

Alexey Fadeev; Andrey Lebedev; Yuri Tairov

doi:10.4028/www.scientific.net/MSF.858.93

Paper Titles

Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77

Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81

Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
p.85

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
p.89

Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli
p.93

Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals
p.97

Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
p.101

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
p.105

Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
p.109

HomeMaterials Science ForumMaterials Science Forum Vol. 858Stress in SiC Single Crystal Caused by the...

Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli

Abstract:

The specific elastic energy (SEE) of the system "SiC single crystal on graphite holder", caused by cooling process due to difference in coefficients of thermal expansion (CTE), is simulated. The dependence of SEE and corresponding elastic stress of SiC single crystal attached to the graphite holder on thickness of holder and SiC crystal is considered. The parameters of the synthetic graphite that can be used for the minimizing the stress are analyzed.