Trench-MOSFETs on 4H-SiC

Abstract:

This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance R_DS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the R_DS,on by approximately 25 % can be achieved using square-shaped or hexagonal unit cells instead of stripe-shaped unit cells. The Trench-MOSFET switching characteristics using a double pulse setup with a switching current I_sw of 100 A and a switching voltage V_sw of 450 V is presented and discussed. The short turn-off and turn-on times in the range of several ten nanoseconds yield large maximum di_sw/dt and dv_sw/dt values, which enable highly efficient power conversion with low switching losses.

• Periodical: Materials Science Forum (Volume 858)
• Pages: 848-851
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.848
• Online since: May 2016
• Authors: Christian T. Banzhaf*, Stephan Schwaiger, Dick Scholten, Stefan Noll, Michael Grieb
• Keywords: 4H-SiC, Double Pulse, MOSFET, Switching, Trench

References

[1] K. Hamada et al., IEEE Transactions on Electron Devices 62 (2), p.278 (2015).

[2] C. T. Banzhaf et al., Materials Science Forum 821-823, p.753 (2015).

[3] T. Hiyoshi et al., Materials Science Forum 821-823, p.741 (2015).

[4] C. T. Banzhaf et al., Materials Science Forum 778-780, p.595 (2014).

[5] T. Behrens et al., Materials Science Forum 740-742, p.801 (2013).

[6] H. Yano et al., Applied Physics Letters 90, pp.042102-3 (2007).