Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure

Yuji Ebiike; Toshikazu Tanioka; Masayuki Furuhashi; Ai Osawa; Masayuki Imaizumi

doi:10.4028/www.scientific.net/MSF.858.829

Paper Titles

Repetitive Short-Circuit Tests on SiC VMOS Devices
p.812

Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET
p.817

Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs
p.821

Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps
p.825

Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure
p.829

Comparison of Test Methods for Proper Characterization of V_T in SiC MOSFETs
p.833

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests
p.840

Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation
p.844

Trench-MOSFETs on 4H-SiC
p.848

HomeMaterials Science ForumMaterials Science Forum Vol. 858Characteristics of High-Threshold-Voltage Low-Loss...

Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure

Abstract:

High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET has exhibited a high threshold voltage of more than 4 V and a low specific on resistance of 5.2 mΩ·cm² at 25 °C. The MOSFET has also exhibited a sufficient blocking characteristic at V_G of 0 V at 150 °C. High speed switching with low switching losses has been demonstrated successfully using the MOSFET at 150 °C.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

829-832

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.829

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Online since:

May 2016

Authors:

Yuji Ebiike*, Toshikazu Tanioka, Masayuki Furuhashi, Ai Osawa, Masayuki Imaizumi

Keywords:

JFET Doping, MOSFET, Silicon Carbide (SiC), Threshold Voltage

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