Repetitive Short-Circuit Tests on SiC VMOS Devices

Maxime Berthou; Pascal Bevilacqua; Jean Baptiste Fonder; Dominique Tournier

doi:10.4028/www.scientific.net/MSF.858.812

Paper Titles

High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes
p.790

Wide Band Gap Semiconductor Technology for Energy Efficiency
p.797

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers
p.803

Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs
p.807

Repetitive Short-Circuit Tests on SiC VMOS Devices
p.812

Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET
p.817

Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs
p.821

Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps
p.825

Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure
p.829

HomeMaterials Science ForumMaterials Science Forum Vol. 858Repetitive Short-Circuit Tests on SiC VMOS Devices

Repetitive Short-Circuit Tests on SiC VMOS Devices

Abstract:

SiC MOSFET are now commercially available and show promising performances when considering static losses, commutations and long term reliability. The devices may face short-circuit conditions and knowing their capibility in terms of critical time and repetitive fault is mandatory before integration in commercial systems. This paper presents the short-circuit performances for two families of commercial devices in terms of critical energy, time and repetitve SC stress. It shows that both devices show similar critical time but very different behavior when stressed under repetitive SC pulses. These results demonstrate that SiC MOSFET reliability under repetitive short-circuit pulses strongly depends on the pulse length and device provider. This information will be crucial to design the system in order to limit the SC length depending on the application requirements.