Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs

Siddarth G. Sundaresan; Brian Grummel; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.858.807

Paper Titles

High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC
p.786

High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes
p.790

Wide Band Gap Semiconductor Technology for Energy Efficiency
p.797

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers
p.803

Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs
p.807

Repetitive Short-Circuit Tests on SiC VMOS Devices
p.812

Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET
p.817

Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs
p.821

Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps
p.825

HomeMaterials Science ForumMaterials Science Forum Vol. 858Short Circuit Robustness of 1200 V SiC Junction...

Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs

Abstract:

Short-circuit (SC) robustness of 1200 V-rated SiC npn Junction Transistors (SJTs) and commercial power DMOSFETs is investigated. Due to low (2x) overdrive base currents and low short-circuit currents, SJTs demonstrate superior SC capability including: (a) minimum short-circuit withstand time (t_SC) of 14 µs, even at V_DS=1000 V (b) Perfectly stable output and blocking characteristics after 10,000, 10 µs long SC pulses at 800 V, (c) t_SC ≥ 18 µs at 800 V up to (at-least) 175°C base-plate temperatures. In contrast, commercial (Gen-II) 1200 V/80 mΩ SiC MOSFETs exhibit catastrophic failure beyond t_SC= 7 µs at 500 V, and t_SC = 3 µs at 800 V, due to excessive SC currents of > 200 A resulting in junction temperatures in excess of 650°C. The MOSFET’s drain leakage current increases by a factor of 120, and the V_TH reduces by 20%, after 7 µs-long SC pulses at 500 V.