Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET

Rudolf Elpelt; Bernd Zippelius; Daniel Domes

doi:10.4028/www.scientific.net/MSF.858.817

Paper Titles

Wide Band Gap Semiconductor Technology for Energy Efficiency
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Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers
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Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs
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Repetitive Short-Circuit Tests on SiC VMOS Devices
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Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET
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Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs
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Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps
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Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure
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Comparison of Test Methods for Proper Characterization of V_T in SiC MOSFETs
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Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET

Abstract:

In switching applications with half-bridge like configurations the load current is commutated to the so-called reverse or body-diode of a switching device once each switching cycle. The bipolar charge generated in the switch in principle leads to a reverse recovery current and to additional losses. Though it is well known, that in silicon carbide these reverse recovery losses are very low compared to e.g. silicon devices, it turns out that depending on device structure and switching conditions the reverse recovery charge for the JFET may become larger than can be explainable by the stored bipolar charge. In this paper therefore we focus on a simulation study comparing the body-diode operation of common lateral channel silicon carbide JFET and MOSFET devices in a so-called double pulse measurement. It is shown, that the MOSFET body-diode operation still remains uncritical under very fast switching conditions, while the JFET body-diode exhibits a pronounced recovery current peak originating from a partial channel turn-on, and thus higher losses.