High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes

Oleg Korolkov; Natalja Sleptsuk; Paul Annus; Raul Land; Toomas Rang

doi:10.4028/www.scientific.net/MSF.858.790

Paper Titles

Forward Current of Al⁺ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components
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Wide Band Gap Semiconductor Technology for Energy Efficiency
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Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers
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Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs
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Repetitive Short-Circuit Tests on SiC VMOS Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 858High Voltage Diffusion-Welded Stacks on the Basis...

High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes

Abstract:

In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

790-794

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.790

Citation:

Cite this paper

Online since:

May 2016

Authors:

Oleg Korolkov*, Natalja Sleptsuk, Paul Annus, Raul Land, Toomas Rang

Keywords:

Diffusion Welded Stacks, Modular Compositions, SiC Schottky Diodes, Vertical Integration

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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