Comparison of Energy Losses in High-Current 1700 V Switches

Siddarth G. Sundaresan; Brian Grummel; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.858.933

Paper Titles

Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)
p.917

A 500 °C Monolithic SiC BJT Latched Comparator
p.921

Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel
p.925

Current Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current Stress
p.929

Comparison of Energy Losses in High-Current 1700 V Switches
p.933

6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer
p.939

An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs
p.945

Electro-Thermal TCAD Model for 22 kV Silicon Carbide IGBTs
p.949

4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates
p.954

HomeMaterials Science ForumMaterials Science Forum Vol. 858Comparison of Energy Losses in High-Current 1700 V...

Comparison of Energy Losses in High-Current 1700 V Switches

Abstract:

1700 V/20 mΩ SiC Junction Transistors (SJTs) were recently released by GeneSiC with specific on-resistance as low as 2.3 mΩ-cm², and current gain > 100. This paper benchmarks the electrical characteristics of the 1700 V SJTs against two best-in-class Si IGBTs. The SJT features 47% and 49% lower on-state voltage drops than the two Si IGBTs, respectively, with the SJT operating at 175°C, and the IGBTs at 150°C. The conduction power loss of the best Si IGBT is 2.2 times larger than the SJT at 25°C, and 1.6 times larger at 150°C. The leakage currents measured on the best IGBT at 1700 V and 150°C is 0.93 mA, as compared to 200 nA for the SJT at 175°C. As compared to the SJT, 3.6x and 3.3x higher (hard) switching energy losses are measured on the best 1700 V Si IGBT, at 25°C, and 150°C, respectively, when switching at a DC link voltage of 1200 V.