A 500 °C Monolithic SiC BJT Latched Comparator

Ye Tian; Luigia Lanni; Ana Rusu; Carl Mikael Zetterling

doi:10.4028/www.scientific.net/MSF.858.921

Paper Titles

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C
p.903

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
p.908

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
p.913

Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)
p.917

A 500 °C Monolithic SiC BJT Latched Comparator
p.921

Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel
p.925

Current Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current Stress
p.929

Comparison of Energy Losses in High-Current 1700 V Switches
p.933

6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer
p.939

HomeMaterials Science ForumMaterials Science Forum Vol. 858A 500 °C Monolithic SiC BJT Latched Comparator

A 500 °C Monolithic SiC BJT Latched Comparator

Abstract:

This paper presents a monolithic 4H-SiC BJT latched emitter-coupled logic (ECL) comparator for high temperature analog-to-digital conversion. The comparator consists of a low-gain pre-amplifier, a track and latch stage and an output buffer. For low-speed input signals, the comparator input offset voltage is 3.9 mV at 27 °C and monotonically increases up to 9.1 mV at 500 °C. The single-ended output swing is 5.5 V at 27 °C and 3.9 V at 500 °C. The minimum comparison time is around 1μs from 27 °C to 500 °C. The whole comparator dissipates 464 mW in average over the considered temperature range with a 15 V power supply. It consumes 2.25 × 0.84 mm² chip area (with the bond pads included).

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Periodical:

Materials Science Forum (Volume 858)

Pages:

921-924

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.921

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Online since:

May 2016

Authors:

Ye Tian*, Luigia Lanni, Ana Rusu, Carl Mikael Zetterling

Keywords:

ADC, Bipolar Junction Transistor (BJT), Emitter-Coupled Logic (ECL), High Temperature Integrated Circuit (IC), Latched Comparator, Silicon Carbide (SiC), Spice Gummel-Poon (SGP)

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* - Corresponding Author

References

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