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4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates

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Abstract:

We experimentally demonstrate 4H-SiC n-channel, DMOS Insulated Gate Bipolar Transistors (IGBTs) on 180 µm thick lightly doped free-standing n- substrates with an ion-implanted collector region, and metal-oxide-semiconductor (MOS) gate on (0001) and (000-1) surfaces. The IGBTs show an on-state current of 20A/cm2 at a power dissipation of 300W/cm2. Threshold voltage of 7.5V and 10.5V was obtained on Si-face and C-face respectively. Both IGBTs show a small positive temperature coefficient of the forward voltage drop, which is useful for easy parallelization of devices.

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Silicon Carbide and Related Materials 2015 View Preview

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Periodical:

Materials Science Forum (Volume 858)

Pages:

954-957

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.954

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Online since:

May 2016

Authors:

Sauvik Chowdhury*, Collin W. Hitchcock, Rajendra P. Dahal, I. Bhat, T. Paul Chow

Keywords:

4H-SiC, A-Face, Inversion Mobility, Reactive Ion Etching

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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