3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability

Takashi Tsuji; Hiromu Shiomi; Naoyuki Ohse; Yasuhiko Onishi; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.858.962

Paper Titles

An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs
p.945

Electro-Thermal TCAD Model for 22 kV Silicon Carbide IGBTs
p.949

4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates
p.954

Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs
p.958

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm² and High Avalanche Withstanding Capability
p.962

Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness
p.966

Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems
p.970

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
p.974

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
p.978

HomeMaterials Science ForumMaterials Science Forum Vol. 8583300V-Class 4H SiC Implantation-Epitaxial Mosfets...

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm² and High Avalanche Withstanding Capability

Abstract:

In this paper, newly developed 3300V-class IEMOSFETs were presented. By means of the optimization of current spreading layers (CSLs), we could achieve low specific on-resistance (R_ONA) of 11.6mΩcm², while maintaining high blocking voltage (BV_DSS) of 3978V. The R_ONA analysis revealed drastic reduction of JFET resistance compared to a MOSFET without a CSL. High ruggedness with the avalanche withstanding energy of 4.6J/cm² was achieved by the optimal device design of the edge termination. We could also confirm favorable characteristics of R_ONA, BV_DSS and threshold voltage (V_TH) at high temperatures up to 200^○C, and the fast switching behavior.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

962-965

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.962

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Online since:

May 2016

Authors:

Takashi Tsuji*, Hiromu Shiomi, Naoyuki Ohse, Yasuhiko Onishi, Kenji Fukuda

Keywords:

3300V, Current-Spreading Layers (CSLs), MOSFET, On-Resistance, Switching Loss

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