3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation

Yusuke Kobayashi; Shinsuke Harada; Hiroshi Ishimori; Shinji Takasu; Takahito Kojima; Keiko Ariyoshi; Mitsuru Sometani; Junji Senzaki; Manabu Takei; Yasunori Tanaka; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.858.974

Paper Titles

Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs
p.958

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm² and High Avalanche Withstanding Capability
p.962

Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness
p.966

Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems
p.970

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
p.974

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
p.978

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications
p.982

High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
p.986

NO_x Sensing with SiC Field Effect Transistors
p.993

HomeMaterials Science ForumMaterials Science Forum Vol. 8583.3 kV-Class 4H-SiC UMOSFET by Double-Trench with...

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation

Abstract:

A 3.3 kV trench MOSFET with double-trench structure was demonstrated. The deep buried p-base regions were fabricated using tilt angle ion implantation into the sidewalls of the trench contacts. The distance between the trench gate and trench contact was determined through simulation, in order to optimize the trade-off between on-resistance (RonA) and the electrical field in the oxide (Eox). A tapered trench was located in the connective area between the edge termination and the active area, in order to maintain breakdown voltage. We achieved a RonA of 10.3 mWcm2 and a breakdown voltage of 3843 V and the maximum Eox at breakdown voltage was estimated to be 3.2 MV/cm.