High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination

Hao Yuan; Qing Wen Song; Xiao Yan Tang; Yu Ming Zhang; Hui Guo; Yue Hu Wang; Yi Meng Zhang; Ren Xu Jia; Yi Men Zhang

doi:10.4028/www.scientific.net/MSF.858.986

Paper Titles

Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems
p.970

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
p.974

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
p.978

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications
p.982

High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
p.986

NO_x Sensing with SiC Field Effect Transistors
p.993

Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors
p.997

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs
p.1001

DNA Detection Using SiC Nanowire Based Transistor
p.1006

HomeMaterials Science ForumMaterials Science Forum Vol. 858High Performance of 5.7kV 4H-SiC JBSs with...

High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination

Abstract:

In this paper, a 5.7kV 4H-SiC Junction Barrier Schottky diode(JBS) with non-uniform field limiting rings termination is simulated and fabricated successfully based on a epitaxial thickness of 49μm and the doping concentration about 1.04×10¹⁵cm^-3 respectively. The reverse breakdown voltage could reach to 5.7kV at least at reverse current of 200μA. And the on-state voltage is 3V at the forward current of 2A, corresponding to an on-resistance of 32mΩ•cm². The corresponding figure-of- merit of V_B²/ R_SP-ON for our fabricated device is 1.026 GW/cm², which is closing to the optimal levels among several reported SiC JBS.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

986-989

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.986

Citation:

Cite this paper

Online since:

May 2016

Authors:

Hao Yuan, Qing Wen Song*, Xiao Yan Tang, Yu Ming Zhang, Hui Guo, Yue Hu Wang, Yi Meng Zhang, Ren Xu Jia, Yi Men Zhang

Keywords:

4H-SiC, FOM, High Voltage, Termination

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Niwa H, Feng G, SudaJ, et al. IEEE Trans. Electron Devices, 59(10) (2012) 2748-2752.

Google Scholar

[2] Kizilyalli I.C., Edwards A. P, Nie H, et al. IEEE Electron Device Letters, 35(6) (2014) 654-656.

Google Scholar

[3] Song Q W, Zhang Y M, Zhang Y M, et al. Sci China Tech Sci., 55(12) (2012) 3401-3404.

Google Scholar

[4] Hull B A, Sumakeris J J, O'Loughlin M J, et al. IEEE Electron Device Letters, , 55(8) (2008) 1864-1870.

Google Scholar

[5] Zhu L, Chow T P. IEEE TransElectron Devices, 55(8) (2008) 1871-1874.

Google Scholar

[6] Chen F P, Zhang Y M, Zhang Y M, et al., Chin. Phys. B 21 (2012) 037304.

Google Scholar

[7] V. Banu, P. Brosselard, X. Jordá, J. Montserrat, et al., Microelectronics Reliability 48 (2008) 1444-1448.

DOI: 10.1016/j.microrel.2008.07.054

Google Scholar

[8] Chen F P, Zhang Y M, Zhang Y M, et al., Chin. Phys. B 20 (2011) 117301.

Google Scholar

[9] P. A. Ivanov, I. V. Grekhov, N. D. Il'inskaya, et al., Semiconductors 45(5) (2011) 668-672.

Google Scholar

[10] Jun Hu, Larry X. Li, Petre Alexandrov, et al., Materials Science Forum 600-603 (2009) 947-950.

Google Scholar

[11] Runhua Huang, Gang Chen, Song Bai, et al., Materials Science Forum 778-780 (2014) 800-803.

Google Scholar