NOx Sensing with SiC Field Effect Transistors

Peter Möller; Mike Andersson; Anita Lloyd Spetz; Jarkko Puustinen; Jyrki Lappalainen; Jens Eriksson

doi:10.4028/www.scientific.net/MSF.858.993

Paper Titles

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
p.974

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
p.978

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications
p.982

High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
p.986

NO_x Sensing with SiC Field Effect Transistors
p.993

Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors
p.997

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs
p.1001

DNA Detection Using SiC Nanowire Based Transistor
p.1006

SiC for Biomedical Applications
p.1010

HomeMaterials Science ForumMaterials Science Forum Vol. 858NOx Sensing with SiC Field Effect Transistors

NO_x Sensing with SiC Field Effect Transistors

Abstract:

In this paper, we investigated the nitrogen oxides (NO, NO₂) detection capability of strontium titanate (SrTiO₃) when used as sensing layer on gas sensitive silicon carbide field effect transistors (SiC-FETs). Sensitivity, selectivity and response times for NO, NO₂, and NH₃ were characterized, to determine the possibility for diesel exhaust after treatment control applications. It was found that NO_x can be detected down to single digit ppm levels at sensor temperatures in the 550°C - 600°C range. In addition, the results indicate that it is possible to suppress sensitivity to ammonia by selecting an operating temperature around 530°C.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

993-996

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.993

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Online since:

May 2016

Authors:

Peter Möller*, Mike Andersson, Anita Lloyd Spetz, Jarkko Puustinen, Jyrki Lappalainen, Jens Eriksson

Keywords:

After Treatment, Diesel Exhaust, FET, Gas Sensing, NO_x, Perovskite, Silicon Carbide (SiC), SrTiO₃, STO

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